Damascene interconnect structures including etchback for low-k dielectric materials

US6838355B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Anthony K. Stamper · Williston, US
• Edward C. Cooney, III · Jericho, US
• Jeffrey P. Gambino · Gresham, US
• Timothy J. Dalton · Ridgefield, US
• John A. Fitzsimmons · Poughkeepsie, US
• Lee M. Nicholson · Katonah, US

Key dates

• Filing date: Aug 4, 2003
• Grant date: Jan 4, 2005
• Expiry date: Aug 4, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming back-end-of-line (BEOL) interconnect structures in disclosed. The method and resulting structure includes etchback for low-k dielectric materials. Specifically, a low dielectric constant material is integrated into a dual or single damascene wiring structure which contains a dielectric material having relatively high dielectric constant (i.e., 4.0 or higher). The damascene structure comprises the higher dielectric constant material immediately adjacent to the metal interconnects, thus benefiting from the mechanical characteristics of these materials, while incorporating the lower dielectric constant material in other areas of the interconnect level.