Multiple-mode memory and method for forming same
US6839262B2 · kind B2 · utility
10Cited by
32References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2004 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Mar 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multiple-mode memory includes a three-dimensional array of word lines, bit lines and memory cells. The memory cells are arranged in multiple vertically stacked layers. In some layers the memory cells are implemented as field-programmable write-once memory cells, and in other layers the memory cells are implemented as field-programmable re-writable memory cells. In this way, both re-writability and permanent data storage are provided in an inexpensive, single-chip solution. Additional types and numbers of types of memory cells can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.