Magnetic random access memory
US6839274B2 · kind B2 · utility
2Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jan 18, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.