High-power ion sputtering magnetron
US6841051B2 · kind B2 · utility
34Cited by
11References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2004 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Jan 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-power ion sputtering magnetron having a rotary cathode comprising a conducting member disposed within the rotary cathode being made of an electrically conductive material for conducting electrical current from the power supply to the rotary cathode. The ion sputtering magnetron also has an electromagnetic field shield disposed between the conducting member and the drive shaft portion. The field shield is made of an electromagnetic field-permeable material such as a ferrous material for reducing damage to parts adjacent to the conducting member that are susceptible to inductive magnetic heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.