GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
US6841274B2 · kind B2 · utility
20Cited by
8References
3Claims
0Family size
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Key dates
| Filing date | May 8, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | May 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.