Photoresist composition and method of forming a photoresist pattern with a controlled remnant ratio
US6841338B2 · kind B2 · utility
1Cited by
9References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Oct 18, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition may include formulas 1 and 2: A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.