Method of fabricating SiC semiconductor device
US6841436B2 · kind B2 · utility
6Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Feb 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a SiC semiconductor device, a surface of a SiC layer (5, 48, 102) is processed into a cleaned surface terminated at Si. An oxide film (7, 49, 105) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO2/SiC cleaned interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.