Method for fabricating embedded nonvolatile semiconductor memory cells

US6841448B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Oliver Gehring · Dresden, DE
• Wolfram Langheinrich · Dresden, DE

Key dates

• Filing date: Jan 14, 2002
• Grant date: Jan 11, 2005
• Expiry date: Jan 14, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/981

Abstract

A method for fabricating embedded nonvolatile semiconductor memory cells is described. The method includes forming a first insulating layer on a substrate having a high-voltage region, a memory region and a logic region. The first insulating layer is removed in the memory region, and a second insulating layer is formed. A charge-storing layer is formed and patterned along with a third insulating layer. The first to third insulating layers and also the charge-storing layer are removed in the logic region. A fourth insulating layer is formed and a conductive control layer is formed and patterned.