Anti-type dosage as LDD implant
US6841460B2 · kind B2 · utility
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7References
10Claims
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Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method is provided for turning off MOS transistors through an anti-code (type) LDD implant without the need for high energy implant that causes poly damage. The method also negates any deleterious effects due to the variations in the thickness of the poly gate. The anti-code LDD implant can be performed vertically, or at a tilt angle, or in a combination of vertical and tilt angle. The method can be made part of a Flash-ROM process that is applicable to both polycide and silicide processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.