Unique process chemistry for etching organic low-k materials
US6841483B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2001 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Feb 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.