Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same
US6841850B2 · kind B2 · utility
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8References
9Claims
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Key dates
| Filing date | Sep 6, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Oct 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.