Thin film magnetic memory device executing self-reference type data read
US6842366B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 10, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Jul 28, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one data read operation, data read for reading stored data before and after a predetermined data write magnetic field is applied to a selected memory cell, respectively, is executed, and the data read is executed in accordance with comparison of voltage levels corresponding to the data read operations before and after application of the predetermined data write magnetic field. In addition, data read operations before and after the application of a data write magnetic field are executed using read modify write. It is thereby possible to avoid an influence of an offset or the like resulting from manufacturing irregularities in respective circuits forming a data read path, to improve efficiency of the data read operation with accuracy and to execute a high rate data read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.