Method and apparatus for growing high quality single crystal
US6843849B1 · kind B1 · utility
6Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2000 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | May 22, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.