Gas flow control in a wafer processing system having multiple chambers for performing same process
US6843882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Jan 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6719
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.