Semiconductor devices and method for manufacturing the same
US6844227B2 · kind B2 · utility
25Cited by
4References
1Claims
0Family size
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Key dates
| Filing date | Dec 26, 2001 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Dec 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a field effect transistor, an Si layer, an SiC (Si1-yCy) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.