Fabrication of semiconductor structures having multiple conductive layers in an opening
US6844241B2 · kind B2 · utility
49Cited by
26References
64Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2001 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Aug 28, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.