Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells

US6844248B2 · kind B2 · utility

Assignee

• THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS · US

Inventors

• Hameed A. Naseem · Fayetteville, US
• M. Haque · Fayetteville, US
• William D. Brown · Fayetteville, US

Key dates

• Filing date: Jul 14, 2003
• Grant date: Jan 18, 2005
• Expiry date: Jul 14, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.