Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby
US6844569B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2004 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Apr 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.