Sun Woon Kim
21Patents
5h-index
28Co-inventors
65Inventor score
Filing activity: Feb 12, 2004 → Mar 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7084420B2 | Nitride based semiconductor device | Electricity | 468 | Expired |
| US6844569B1 | Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby | Electricity | 34 | Expired |
| US7187007B2 | Nitride semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7902544B2 | Nitride semiconductor light emitting device | Electricity | 6 | Active |
| US7135716B2 | Gallium nitride-based semiconductor light-emitting device | Electricity | 5 | Expired |
| US7893443B2 | Nitride based semiconductor light-emitting device | Electricity | 3 | Expired |
| US6936838B2 | Nitride-based semiconductor device | Electricity | 3 | Expired |
| US7018912B2 | Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7687294B2 | Nitride semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Active |
| US7829882B2 | Nitride semiconductor light emitting device | Electricity | 2 | Active |
| US8455906B2 | Semiconductor light-emitting device with improved light extraction efficiency | Electricity | 2 | Active |
| US7999272B2 | Semiconductor light emitting device having patterned substrate | Electricity | 2 | Active |
| US8071994B2 | Semiconductor light-emitting device with improved light extraction efficiency | Electricity | 1 | Active |
| US7067401B2 | Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7692201B2 | Semiconductor light-emitting device with improved light extraction efficiency | Electricity | 1 | Expired |
| US8372669B2 | Semiconductor light emitting device having patterned substrate and manufacturing method of the same | Electricity | 1 | Active |
| US12125954B2 | Semiconductor light emitting device package | Electricity | 0 | Active |
| US8415708B2 | Nitride based semiconductor light-emitting device | Electricity | 0 | Active |
| US7575944B2 | Method of manufacturing nitride-based semiconductor light emitting diode | Electricity | 0 | Active |
| US10529699B2 | Light source module, method of manufacturing the module, and backlight unit including the light source module | Electricity | 0 | Active |
| US10332865B2 | Method of fabricating light emitting diode module | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.