III-V compound semiconductor
US6844574B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InuGavAlwN (where 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦x≦1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.