Semiconductor integrated circuit device and manufacturing method therefor
US6844578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Jul 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
In a semiconductor integrated circuit device in which the number of the PMOS transistors to be used is relatively larger than that of the NMOS transistors and the PMOS transistor is used as an output driver, there is provided a semiconductor integrated circuit device having excellent stability, reliability, and performance while being inexpensive, and a manufacturing method thereof. In such a semiconductor integrated circuit device, complementary MOS circuits are composed of a P-type MOSFET (36) and an N-type MOSFET (37) which are a horizontal, an output driver is composed of a P-type vertical MOSFET (38) having a trench structure, and a conductivity type of the gate electrode of the respective MOSFETs is set as a P-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.