Magnetic non-volatile memory coil layout architecture and process integration scheme
US6845036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Apr 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to methods and apparatus that allow data to be stored in a magnetic memory cell, such as a giant magneto-resistance (GMR) cell, of a magnetoresistive random access memory (MRAM). Embodiments of the invention advantageously wind a word line around a magnetic memory cell to increase the magnetic field induced by the word line. The word line can be formed by connecting a segment in a first layer to a segment in a second layer with the memory cell disposed between the first layer and the second layer. Advantageously, embodiments of the invention can include relatively narrow magnetic memory cells, and/or bit lines, have relatively high write selectivity, and can use relatively low word currents to store data. In one MRAM, current is passed through a word line by allowing current to flow through a corresponding word row line and a corresponding word column line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.