Dielectric layer for a semiconductor device and method of producing the same
US6846757B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 12, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Oct 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a low dielectric constant insulating film exhibiting an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity. A method of producing such a semiconductor device includes depositing a dielectric layer over a substrate and treating the dielectric layer in a hydrogen containing plasma such that the dielectric layer exhibits an Si—H Fourier Transform Infrared (FTIR) doublet defined by a first and a second peak, wherein the first peak is located at a higher wave number than the second peak, and wherein the ratio of the first peak to the second peak is greater than unity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.