Light emitting device
US6847056B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 29, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Feb 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.