Semiconductor light emitting devices
US6847057B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.