Nathan Gardner
12Patents
8h-index
28Co-inventors
72Inventor score
Filing activity: Mar 24, 1995 → Feb 25, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6635904B2 | Indium gallium nitride smoothing structures for III-nitride devices | Electricity | 272 | Expired |
| US6489636B1 | Indium gallium nitride smoothing structures for III-nitride devices | Electricity | 224 | Expired |
| US6847057B1 | Semiconductor light emitting devices | Electricity | 146 | Expired |
| US6630692B2 | III-Nitride light emitting devices with low driving voltage | Electricity | 42 | Expired |
| US6822991B2 | Light emitting devices including tunnel junctions | Electricity | 38 | Expired |
| US6943381B2 | III-nitride light-emitting devices with improved high-current efficiency | Electricity | 34 | Expired |
| US6955933B2 | Light emitting diodes with graded composition active regions | Electricity | 21 | Expired |
| US7345324B2 | Light emitting diodes with graded composition active regions | Electricity | 12 | Expired |
| US5656538A | Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices | Emerging Cross-Sectional Technologies | 8 | Expired |
| US10217901B2 | Light emitting device with improved extraction efficiency | Electricity | 0 | Active |
| US10586891B2 | Light emitting device with improved extraction efficiency | Electricity | 0 | Active |
| US10056531B2 | Method of processing a semiconductor structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.