Thin-film semiconductor device, manufacturing method of the same and image display apparatus
US6847069B2 · kind B2 · utility
5Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Feb 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.