Capacitor for a semiconductor device and method for fabrication therefor
US6847077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Jul 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in the dielectric material of the metal layer and the capacitor includes a first capacitor electrode formed within the recess in electrical contact with the device component of the metallization layer. An insulator may be formed over the first capacitor electrode, with a second capacitor electrode formed over the insulator. These elements are preferably conformally deposited within the trench, thereby forming a recess, a portion of which extends within the trench. A subsequently fabricated device component may then be placed in electrical contact with the second capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.