Michael Carroll
126Patents
14h-index
43Co-inventors
86Inventor score
Filing activity: Jun 9, 1997 → Apr 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7868419B1 | Linearity improvements of semiconductor substrate based radio frequency devices | Electricity | 371 | Active |
| US9214337B2 | Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same | Electricity | 184 | Active |
| US8143120B2 | Multiple doping level bipolar junctions transistors and method for forming | Electricity | 114 | Active |
| US8076750B1 | Linearity improvements of semiconductor substrate based radio frequency devices | Electricity | 92 | Active |
| US7135766B1 | Integrated power devices and signal isolation structure | Electricity | 90 | Expired |
| US8723260B1 | Semiconductor radio frequency switch with body contact | Electricity | 50 | Active |
| US6194739A | Inline ground-signal-ground (GSG) RF tester | Electricity | 39 | Expired |
| US7915706B1 | Linearity improvements of semiconductor substrate using passivation | Electricity | 30 | Active |
| US6356496B1 | Resistor fuse | Physics | 29 | Expired |
| US6211541A | Article for de-embedding parasitics in integrated circuits | Electricity | 20 | Expired |
| US7772648B1 | Performance enhanced silicon-on-insulator technology | Electricity | 20 | Active |
| US9484973B1 | Voltage equalization for stacked FETs in RF switches | Electricity | 19 | Active |
| US6001701A | Process for making bipolar having graded or modulated collector | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6847077B2 | Capacitor for a semiconductor device and method for fabrication therefor | Electricity | 17 | Expired |
| US6359317B1 | Vertical PNP bipolar transistor and its method of fabrication | Electricity | 14 | Expired |
| US6844236B2 | Method and structure for DC and RF shielding of integrated circuits | Electricity | 9 | Expired |
| USD663201S1 | Perforated void-fill pad | General | 6 | Active |
| US7095094B2 | Multiple doping level bipolar junctions transistors and method for forming | Electricity | 5 | Expired |
| US9356144B1 | Remote gate protection diode for field effect transistors | Electricity | 5 | Active |
| US7382030B1 | Integrated metal shield for a field effect transistor | Electricity | 5 | Active |
| US6194750A | Integrated circuit comprising means for high frequency signal transmission | Electricity | 4 | Expired |
| US7713811B2 | Multiple doping level bipolar junctions transistors and method for forming | Electricity | 4 | Active |
| US11387157B2 | RF devices with enhanced performance and methods of forming the same | Electricity | 2 | Active |
| US7449388B2 | Method for forming multiple doping level bipolar junctions transistors | Electricity | 2 | Active |
| US6940151B2 | Silicon-rich low thermal budget silicon nitride for integrated circuits | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.