Microelectronic capacitor structure with radial current flow

US6847092B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Maldei · Durham, US
• Malati Hegde · Cary, US
• Guenter Gerstmeier · Chapel Hill, US
• Jinwhan Lee · Raleigh, US
• Steven Baker · Apex, US
• Jon Berry · Durham, US
• Brian Cousineau · Burlington, US
• Wenchao Zheng · Hubei, CN

Key dates

• Filing date: Mar 6, 2003
• Grant date: Jan 25, 2005
• Expiry date: Mar 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/212

Abstract

A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.