Spin valve thin film magnetic element and thin film magnetic head
US6847508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Jun 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated. The present invention also provides a magnetic head using the spin valve thin film magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.