Magnetic memory which detects changes between first and second resistive states of memory cell
US6847544B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Nov 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory which detects changes between resistive states of a memory cell is disclosed. In one embodiment the magnetic memory includes a memory cell which has first and second resistive states. First and second write conductors are configured to conduct first and second currents to change the memory cell between the first and the second resistive states. The first and the second write conductors are routed in first and second directions and intersect the memory cell. First and second sense conductors are configured to conduct a sense current through the memory cell. A sense circuit coupled to the second sense conductor is configured to detect the change between the first and the second resistive states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.