Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6847547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Jun 8, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.