Methods of forming copper-containing sputtering targets
US6849139B2 · kind B2 · utility
10Cited by
69References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2001 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Jun 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1275
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention includes a method of forming a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.