Device and method for depositing one or more layers on a substrate

US6849241B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Martin Dauelsberg · Aachen, DE
• Marcus Schumacher · Kerpen, DE
• Holger Juergensen · Aachen, DE
• Gerd Strauch · Aachen, DE
• Piotr Strzyzewski · Herzogenrath, DE

Key dates

• Filing date: Aug 1, 2002
• Grant date: Feb 1, 2005
• Expiry date: Nov 22, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1016
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.