Gerd Strauch
7Patents
5h-index
15Co-inventors
49Inventor score
Filing activity: Nov 18, 1999 → Mar 24, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6849241B2 | Device and method for depositing one or more layers on a substrate | Emerging Cross-Sectional Technologies | 343 | Expired |
| US6309465A | CVD reactor | Chemistry; Metallurgy | 22 | Expired |
| US7294207B2 | Gas-admission element for CVD processes, and device | Chemistry; Metallurgy | 17 | Expired |
| US6786973B2 | Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method | Chemistry; Metallurgy | 13 | Expired |
| US7201942B2 | Coating method | Chemistry; Metallurgy | 8 | Expired |
| US7056388B2 | Reaction chamber with at least one HF feedthrough | Electricity | 3 | Expired |
| US7473316B1 | Method of growing nitrogenous semiconductor crystal materials | Chemistry; Metallurgy | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.