Nitride semiconductor device with reduced polarization fields
US6849472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.