Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices

US6849491B2 · kind B2 · utility

Assignee

• DALSA Semiconductor Inc. · CA

Inventors

• Stephane Martel · Kirk Street, CA
• Yan Riopel · Granby, CA
• Sebastien Michel · Granby, CA
• Luc Ouellet · Granby, CA

Key dates

• Filing date: Sep 28, 2001
• Grant date: Feb 1, 2005
• Expiry date: Sep 28, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0109

Abstract

A process for making a integrated circuits of different typed is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence is chosen from a predefined common set of mask steps according to the particular type of integrated circuit to be fabricated. In this way, various types of integrated circuit can be fabricated in a most efficient manner.