Method and device for forming an STI type isolation in a semiconductor device
US6849520B2 · kind B2 · utility
24Cited by
15References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2003 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.