Pulsed processing semiconductor heating methods using combinations of heating sources
US6849831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Aug 24, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/928
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.