High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration
US6849866B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Jul 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the same polarity which is opposite to the modulation doping of the PHEMT and they are separated by a lightly doped layer of specific thickness. The combination is separated from the PHEMT modulation doping by a specific thickness of undoped material. The charge sheets are thin and highly doped. The top charge sheet achieves low gate contact resistance and the bottom charge sheet defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. The structure produces a pnp bipolar transistor, enhancement and depletion type FETs, a vertical cavity surface emitting laser, and a resonant cavity detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.