Optical semiconductor device comprising a multiple quantum well structure

US6849881B1 · kind B1 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Volker Harle · Hemau, DE
• Berthold Hahn · Hemau, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Helmut Bolay · Nittendorf, DE
• Stefan Bader · Fort Collins, US
• Dominik Eisert · Regensberg, DE
• Uwe Strauss · Bad Abbach, DE
• Johannes Volkl · Erlangen, DE
• Ulrich Zehnder · Regensburg, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Andreas Weimer · Regensburg, DE

Key dates

• Filing date: Nov 20, 2000
• Grant date: Feb 1, 2005
• Expiry date: Nov 14, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3408
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.