Method of fabricating semiconductor device
US6849959B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Nov 14, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
Abstract
A method of fabricating a semiconductor device according to the invention comprises forming a capacitor comprising a lower electrode formed on a semiconductor substrate, a capacitive insulator made up of a metal oxide film, formed on the lower electrode, and an upper electrode formed on the capacitive insulator; forming a metal pattern to be electrically connected to the electrodes of the capacitor; forming a first protection film which coats at least a side face of the metal pattern; and forming a water constituents diffusion preventive film on the side face and top face of the metal pattern through the intermediary of the first protection film. As a result, a method of fabricating a ferroelectric memory capable of protecting a ferroelectric capacitor from water constituents evolved during a fabrication process, and maintaining satisfactory memory characteristics can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.