Inventor · Tokyo, JP

Daisuke Inomata

15Patents
3h-index
14Co-inventors
53Inventor score

Filing activity: Dec 13, 2001 → Aug 7, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US8536694B2 Semiconductor device Electricity 10 Active
US6635529B2 Method of fabricating semiconductor device Emerging Cross-Sectional Technologies 5 Expired
US10975497B2 Light emitting device Electricity 3 Active
US7233077B2 Semiconductor device Electricity 2 Expired
US9634216B2 Light emitting device Electricity 2 Active
US6891277B2 Semiconductor device alignment mark having oxidation prevention cover film Electricity 1 Expired
US6849959B2 Method of fabricating semiconductor device Emerging Cross-Sectional Technologies 1 Expired
US7153704B2 Method of fabricating a ferroelectric capacitor having a ferroelectric film and a paraelectric film Electricity 0 Expired
US6857172B2 Method of manufacturing ferroelectric capacitor Emerging Cross-Sectional Technologies 0 Expired
US7868420B2 Semiconductor device which includes a capacitor and an interconnection film coupled to each other and a manufacturing method thereof Electricity 0 Active
US10340429B2 Light emitting device Electricity 0 Active
US12365837B2 Wavelength conversion member Emerging Cross-Sectional Technologies 0 Active
US8178844B2 Infrared detecting device and manufacturing method thereof Physics 0 Active
US10836961B2 Phosphor, method for manufacturing same, and light-emitting device Electricity 0 Active
US11525082B2 Phosphor and production method thereof phosphor-including member, and light emitting device or projector Chemistry; Metallurgy 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.