Patent · US Expired

Temperature-dependent refresh cycle for DRAM

US6850448B2 · kind B2 · utility

3Cited by

7References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joachim Schnabel · Hersbruck, DE
Michael Sommer · Raubling, DE

Key dates

Filing date	Mar 11, 2003
Grant date	Feb 1, 2005
Priority date	—
Expiry date	Apr 4, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH03K3/0231
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A circuit for generating a refresh signal for a memory cell, includes a temperature-independent current source, a temperature-independent voltage source, and a temperature-dependent reference voltage source. A capacitor's first and second terminals are connected respectively to the temperature-independent current source, and the temperature-independent voltage source. The capacitor's first terminal is connected to a first input terminal of a comparator. The comparator's second input is connected to the temperature-dependent reference voltage source. The comparator is configured to output a refresh signal in response to a difference between voltages present at the first and second inputs thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.