Method for depositing a silicon-containing dielectric material on copper
US6852373B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 3, 2000 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Jan 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a dielectric material on copper apparent on the surface of a structure, by placing the structure in a depositing chamber of CVD type (Chemical Vapor Deposition), adding to the chamber a first gas forming a precursor for the formation of the dielectric material and containing an element able to contaminate copper, adding to the chamber a second gas containing a chemical element intended, together with the element contained in the first gas and able to contaminate copper, to form said dielectric material, the second gas being able to react with the first gas to give the deposit of dielectric material, performing the deposit of dielectric material from the first gas and the second gas, characterized in that the method comprises a step for adding a third gas able to prevent the contamination of copper by said element contained in the first gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.