Pascale Motte
2Patents
2h-index
5Co-inventors
27Inventor score
Filing activity: Jul 3, 2000 → Feb 21, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6528419B1 | Process of fabricating an integrated circuit | Electricity | 6 | Expired |
| US6852373B1 | Method for depositing a silicon-containing dielectric material on copper | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.