Photoresist composition for imaging thick films
US6852465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.