Method of manufacturing semiconductor device
US6852572B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2001 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Feb 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of manufacturing a semiconductor device of the present invention comprises: forming a resin layer on a surface of a semiconductor wafer on which a plurality of semiconductor elements are formed, forming through-holes on the resin layer, a first cutting of either the semiconductor wafer or the resin layer, mounting conductive balls on the through-hole, connecting the conductive ball to electrodes of the semiconductor element, and a second cutting for dividing the wafer into each piece of semiconductor devices. With the processes of the present invention, conductive balls can be easily and effectively mounted on a wafer under optimum conditions, without failure such as slipping or falling down from the required position. This fact contributes to an increased efficiency and a good productivity in the production of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.