Carbon nanotube gate field effect transistor
US6852582B2 · kind B2 · utility
28Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Jun 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.